Published in Nature Communications

Our research team have, in a joint effort with several others, been working on tuning the charge carrier density of graphene on silicon carbide. The air-stable doping of epitaxial graphene on SiC developed in this effort yields low-disorder, charge-neutral, large-area graphene with carrier mobilities ~70 000 cm²/Vs at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin-coating wafer-scale substrates in ambient conditions, opens up a scalable technological route toward expanding the functionality of 2D materials.

The original article can be found here.

It's ok with me!

Dear visitor,

This site uses cookies. By continuing to browse the site, you are agreeing to our use of cookies.