Graphensic
Graphensic is a world leading supplier of high quality epitaxial graphene on silicon carbide. We strive to aid our customers in developing next generation technologies. Our products are manufactured using our patented High Temperature Graphene Process, resulting in high quality products for commercial use.
Graphene
Graphene is a two dimensional (2D) building block of graphite and it was first demonstrated as free standing 2D crystal in 2004 by K. Novoselov and A. Geim, the Nobel Prize in Physics winners in 2010. Graphene sheets were isolated from highly oriented pyrolytic graphite (HOPG) by means of mechanical exfoliation.
Since then graphene has been made by different techniques and processes, e.g. liquid exfoliation, chemical synthesis, deposition on transition metals from hydrocarbons, and thermal decomposition of silicon carbide (SiC).
Latest news
Published in Nature Communications
Our research team have, in a joint effort with several […]
Graphensic investigates Hall sensors
Graphensic and Chalmers are part of an international collaboration in […]
Graphensic launches webshop
Our […]
Graphensic launches graphene-based resistance standard
The revolutionary material graphene has opened up a whole new range of possible applications.
Graphene Flagship
Graphensic are proud to present that the company now is an associated member with the Graphene Flagship.
Recent publications
- On the interaction of toxic Heavy Metals (Cd, Hg, Pb) with graphene quantum dots and infinite grapheme
- Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy
- Origin of the π -band replicas in the electronic structure of graphene grown on 4H -SiC(0001)
- Stable and Tunable Charge Carrier Control of Graphene for Quantum Resistance Metrology
- 3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE)
- Electrical characterisation of thick 3C-SiC layers grown on off-axis 4H-SiC substrates
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