Our research team have, in a joint effort with several others, been working on tuning the charge carrier density of graphene on silicon carbide. The air-stable doping of epitaxial graphene on SiC developed in this effort yields low-disorder, charge-neutral, large-area graphene with carrier mobilities ~70 000 cm²/Vs at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin-coating wafer-scale substrates in ambient conditions, opens up a scalable technological route toward expanding the functionality of 2D materials.

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